The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Apr. 21, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-Suk Lee, Suwon-si, KR;

Jungoo Kang, Seoul, KR;

Gihee Cho, Yongin-si, KR;

Sanghyuck Ahn, Daegu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/12 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/12 (2013.01); H01L 21/302 (2013.01); H01L 21/76885 (2013.01);
Abstract

Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.


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