Cambridge, MA, United States of America

Sanghoon Bae

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Massachusetts Institute of Technology. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanghoon Bae. Retrieved from https://idiyas.com/inventor/sanghoon-bae-23t895m3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sanghoon Bae

Introduction

Sanghoon Bae is an accomplished inventor based in Cambridge, MA. He is known for his contributions to the field of epitaxial growth of materials. His work has significant implications for various technological advancements.

Latest Patents

Sanghoon Bae holds a patent titled "Multi-regional epitaxial growth and related systems and articles." This patent focuses on the epitaxial growth of materials, detailing systems and articles that enhance this process. His innovative approach has the potential to improve the efficiency and effectiveness of material growth techniques.

Career Highlights

Bae is affiliated with the Massachusetts Institute of Technology, where he continues to push the boundaries of research and innovation. His work at MIT has allowed him to explore new frontiers in material science and engineering.

Collaborations

Sanghoon Bae has collaborated with notable colleagues, including Jeehwan Kim and Yunjo Kim. These partnerships have fostered a dynamic research environment, leading to groundbreaking advancements in their respective fields.

Conclusion

Sanghoon Bae's contributions to the field of epitaxial growth exemplify the spirit of innovation and collaboration in research. His work not only advances scientific understanding but also paves the way for future technological developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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