Hwasung, South Korea

Sang Sik Moon

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang Sik Moon. Retrieved from https://idiyas.com/inventor/sang-sik-moon-l2c1uspx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Innovations of Sang Sik Moon

Introduction

Sang Sik Moon is a notable inventor based in Hwasung, South Korea. He has made significant contributions to the field of materials science, particularly in the development of resin solutions.

Latest Patents

Sang Sik Moon holds 1 patent for a resin solution and method of forming a protection layer. This innovative resin solution is designed for creating a protective layer and includes an organic solvent and a resol resin. The formulation may also incorporate a cross-linking agent, a photoactive compound, and a development accelerator. The method involves applying the resin solution onto a substrate and hard baking it to form a cured resin layer. The resin solution can consist of either a resol resin or a novolac resin.

Career Highlights

Sang Sik Moon is currently employed at Samsung Electronics Co., Ltd., where he continues to advance his research and development efforts. His work has implications for various applications in electronics and materials engineering.

Collaborations

He has collaborated with notable colleagues, including Seok Bong Park and Myung Sun Kim, contributing to a dynamic research environment.

Conclusion

Sang Sik Moon's innovative work in resin solutions exemplifies the intersection of creativity and technology in modern materials science. His contributions are paving the way for advancements in protective coatings and related applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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