Sang-kug Park

Title: Innovations of Sang-kug Park

Introduction

Sang-kug Park is a notable inventor based in Bucheon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of voltage regulators for non-volatile memory devices. With a total of 3 patents to his name, Park continues to push the boundaries of innovation in his field.

Latest Patents

One of his latest patents is a high voltage regulator for non-volatile memory devices. This invention includes a first regulating unit, a second regulating unit, and an output node. The first regulating unit is designed to regulate the program voltage during a voltage-level-up interval of a memory cell, while the second regulating unit manages the program voltage during a voltage-level-down interval. The output node is responsible for outputting the regulated program voltage.

Another significant patent is a voltage regulator for use in nonvolatile semiconductor memory. This invention features a standby regulator unit and an active regulating unit. The design allows for the decoupling of the standby and active regulating units, enabling both to operate simultaneously during processes such as read operations. The standby regulating unit includes a short pulse generator and a feedback loop to disable it for a predetermined amount of time.

Career Highlights

Sang-kug Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to collaborate with other talented professionals in the field, enhancing the innovation process.

Collaborations

One of his notable coworkers is Dae-Han Kim. Their collaboration has contributed to the advancement of technology in semiconductor memory devices.

Conclusion

Sang-kug Park's contributions to the field of semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of efficient voltage regulation in memory devices.