Ichon, South Korea

Sang-Hoon Shin

This inventor holds 1 USPTO granted patent. Top assignee: Skhynix Inc.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Hoon Shin. Retrieved from https://idiyas.com/inventor/sang-hoon-shin-yn93b1mx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Sang-Hoon Shin in Semiconductor Memory Technology.

Introduction

Sang-Hoon Shin is a notable inventor based in Ichon, South Korea. He has made significant contributions to the field of semiconductor memory technology. His innovative work focuses on improving the alignment margin in semiconductor memory apparatuses.

Latest Patents

Sang-Hoon Shin holds a patent for a "Stack bank type semiconductor memory apparatus capable of improving alignment margin." This invention enhances the alignment margin for a bank while ensuring adequate space for forming a global input/output line. The apparatus features a stack bank structure with at least two sub-banks that are continuously stacked without disconnection of data signal lines. Additionally, a control block is positioned at one side of the stack bank structure to simultaneously manage column-related signals of the sub-banks. He has 1 patent to his name.

Career Highlights

Sang-Hoon Shin is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to contribute to advancements in memory technology, making a lasting impact on the field.

Collaborations

Some of his coworkers include Seung-Wook Kwak and Keun-Soo Song. Their collaboration has likely fostered an environment of innovation and creativity within the company.

Conclusion

Sang-Hoon Shin's contributions to semiconductor memory technology exemplify the importance of innovation in the tech industry. His patent reflects a significant advancement that could influence future developments in memory apparatuses.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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