Seongnam, South Korea

Sang Doo Kim

This inventor holds 1 USPTO granted patent. Top assignees: Skhynix Inc., Yonsei University. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang Doo Kim. Retrieved from https://idiyas.com/inventor/sang-doo-kim-304od8p5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Sang Doo Kim: Innovator in Memory Device Repair

Introduction

Sang Doo Kim is a notable inventor based in Seongnam, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work has implications for improving the reliability and efficiency of memory technology.

Latest Patents

Sang Doo Kim holds a patent titled "Method and apparatus for repairing memory device." This patent outlines a method for repairing memory devices by collecting fail information on fail cells in a multi-block memory. The process involves classifying the fail cells into first and second types and utilizing various spare memory options based on the fail information to repair the fail cells effectively.

Career Highlights

Throughout his career, Sang Doo Kim has worked with prominent organizations such as SK Hynix Inc. and Yonsei University. His experience in these institutions has allowed him to develop and refine his expertise in memory technology and innovation.

Collaborations

Sang Doo Kim has collaborated with notable colleagues, including Sung Ho Kang and Joo Young Kim. These partnerships have contributed to his research and development efforts in the field of memory devices.

Conclusion

Sang Doo Kim's contributions to memory device technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of more reliable memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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