Suwon-si, South Korea

Sang-Chul Han

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2012-2016

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3 patents (USPTO):Explore Patents

Title: Innovations by Sang-Chul Han in Semiconductor Technology

Introduction

Sang-Chul Han is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on methods of fabricating gate insulating layers and semiconductor devices, which are crucial for the advancement of electronic components.

Latest Patents

One of his latest patents involves methods of fabricating gate insulating layers in gate trenches and methods of fabricating semiconductor devices that include these layers. This method outlines a process that begins with forming a field region that defines an active region in a substrate. It continues with the formation of a gate trench that partially exposes both the active and field regions. A gate insulating layer is then formed on the surface of the active region, followed by the conformal formation of a gate barrier layer that includes metal. The process also includes forming a gate electrode layer and a gate capping layer. Notably, the formation of the gate insulating layer involves creating a first gate oxide layer through primary oxidation and a second gate oxide layer through secondary oxidation of the active region's surface.

Another significant patent by Han focuses on semiconductor devices that feature a nitrided gate insulating layer. This patent describes a method that includes forming device isolation regions in a substrate to define active regions, and gate trenches that expose these regions. The process involves conformally forming a preliminary gate insulating layer made of silicon oxide, which is then nitrided using a radio-frequency bias. This results in a nitrided preliminary gate insulating layer that includes silicon oxynitride. The method concludes with the formation of a gate insulating layer and a gate electrode layer, along with a gate capping layer to fill the gate trenches.

Career Highlights

Sang-Chul Han has worked with prominent companies in the technology sector, including Samsung Electronics and Samsung SDI. His experience in these organizations has allowed him to contribute to cutting-edge innovations in semiconductor technology.

Collaborations

Throughout his career, Han has collaborated with notable colleagues such as Tai-Su Park and Young-Dong Lee. These partnerships have likely enhanced his research and development efforts in the semiconductor field.

Conclusion

Sang-Chul Han's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in electronic devices and materials

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