Suwon-si, South Korea

Sang-Bin Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Bin Ahn. Retrieved from https://idiyas.com/inventor/sang-bin-ahn-zusokwv8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sang-Bin Ahn

Introduction

Sang-Bin Ahn is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor memory devices.

Latest Patents

Sang-Bin Ahn holds 1 patent for a semiconductor memory device. This innovative device features a substrate with a cell region and a peripheral region. It includes a cell region isolation layer that separates these two regions, along with multiple cell gate structures. Each cell gate structure contains a cell gate electrode that extends in a specific direction. The active areas within the cell region are designed to improve the overall functionality of the memory device.

Career Highlights

Sang-Bin Ahn is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovations. He has played a crucial role in developing advanced memory solutions that meet the demands of modern technology.

Collaborations

Sang-Bin Ahn has collaborated with notable colleagues, including Kang In Kim and Kyoung Hwan Kim. These partnerships have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Sang-Bin Ahn's contributions to semiconductor memory devices highlight his expertise and dedication to innovation. His work continues to influence the technology landscape, making significant strides in performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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