Hwaseong, South Korea

San Song

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovations of San Song

Introduction

San Song is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of non-volatile memory devices. His work focuses on enhancing the efficiency and reliability of memory systems.

Latest Patents

San Song holds a patent for a "Non-volatile memory device having adjustable read voltage, memory system comprising same, and method of operating same." This innovative device includes a memory cell array with a selected page that contains multiple error correction code (ECC) units. A voltage generation unit is designed to generate a read voltage for data retrieval from the selected page. The read voltage levels are individually set for each ECC unit based on data detection results. During a read retry section for ECC units that have detected read errors, a re-read operation is performed according to the specific read voltage levels assigned to those units. This patent showcases his expertise in improving memory technology.

Career Highlights

San Song is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves working on advanced memory solutions that are crucial for modern electronic devices. His innovative approach has contributed to the development of more efficient memory systems.

Collaborations

San collaborates with talented coworkers, including Seung-Yeon Lee and Hee-Woong Kang. Together, they work on various projects that push the boundaries of memory technology.

Conclusion

San Song's contributions to the field of non-volatile memory devices highlight his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in memory system efficiency and reliability.

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