Samki Kim

Title: Samki Kim’s Semiconductor Inventions

Introduction

Samki Kim is an inventor based in Suwon-si, South Korea, whose patent work focuses on vertical semiconductor devices and memory technologies. Kim is associated with Samsung Electronics Ltd. and has 2 patents listed in the provided information.

Latest Patents

**Semiconductor device.** This invention describes a semiconductor device with a gate stack formed from alternating gate and insulation layers on a semiconductor substrate. Vertical channel structures and a word line cut pass through the stack, while a passivation layer separates it from a string select line stack. The passivation layer has two layers with different concentrations of a passivation element.

**Bonding type vertical semiconductor devices.** This invention describes a vertical semiconductor device with alternating insulation patterns and gate electrodes. One gate electrode serves as the gate of an erase transistor. A channel structure passing through the pattern structure includes a data storage structure, channel, semiconductor liner, doped semiconductor pattern, filling insulation pattern, and capping pattern.

Career Highlights

Kim’s listed inventions address structural features of vertical semiconductor devices, including gate stacks, channel structures, passivation layers, and erase transistors. These designs reflect work in semiconductor device engineering at Samsung Electronics Ltd.

Collaborations

The provided information lists Nambin Kim and Taehun Kim as Kim’s coworkers. It does not specify their roles in the patents or describe particular collaborations.

Conclusion

Samki Kim’s two listed patents focus on vertical semiconductor device structures and components, contributing to the range of semiconductor inventions associated with Samsung Electronics Ltd.