Sami C Antrazi

Title: The Innovations of Sami C Antrazi

Introduction

Sami C Antrazi is an accomplished inventor based in Fairfax Station, Virginia. He has made significant contributions to the field of thin films and their applications in various devices. His innovative work has led to the development of a patented method for forming amorphous vanadium oxide films.

Latest Patents

Sami C Antrazi holds a patent for "Thin films and methods and machines for forming the thin films." This patent describes methods for depositing an amorphous vanadium oxide (VO) film. The process involves vaporizing vanadium from a source while introducing a gas containing an oxygen species and a process modifying additive into the chamber. This technique allows for the deposition of an amorphous VO film on a substrate, enhancing its properties. The process modifying additive can stabilize the deposition rate, reduce resistivity, and improve thickness control and uniformity. Additionally, the thin film may be nitrogen-enhanced, containing at least 0.2 atomic % nitrogen, and can be utilized in devices such as thermal or infrared sensors, particularly bolometers.

Career Highlights

Sami C Antrazi is currently associated with 4 Wave, Inc., where he continues to innovate in the field of thin films. His work has garnered attention for its potential applications in advanced sensor technologies.

Collaborations

Sami has collaborated with notable colleagues, including Anthony Githinji and David Alan Baldwin, contributing to the advancement of their shared research interests.

Conclusion

Sami C Antrazi's contributions to the field of thin films and his innovative patent demonstrate his commitment to advancing technology. His work has the potential to impact various applications, particularly in sensor technology.