Chiba, Japan

Saiichirou Ohtsuka

This inventor holds 1 USPTO granted patent. Top assignee: Sii Crystal Technology Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Saiichirou Ohtsuka. Retrieved from https://idiyas.com/inventor/saiichirou-ohtsuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: The Innovations of Saiichirou Ohtsuka

Introduction

Saiichirou Ohtsuka is a notable inventor based in Chiba, Japan. He has made significant contributions to the field of piezoelectric technology. His work focuses on creating compact and durable devices that utilize piezoelectric principles.

Latest Patents

Ohtsuka holds a patent for a piezoelectric vibrating reed and a piezoelectric vibrator. This invention aims to provide a small-sized piezoelectric vibrating reed with excellent durability. The piezoelectric vibrating reed features a rectangular piezoelectric plate, a vibrating portion on its principal surface, and mount portions at both ends for secure installation. The piezoelectric vibrator incorporates this vibrating reed along with a package that supports the mount portions.

Career Highlights

Ohtsuka is associated with Sii Crystal Technology Inc., where he continues to innovate in the field of piezoelectric devices. His work has contributed to advancements in various applications that require reliable and efficient vibration mechanisms.

Collaborations

Some of his notable coworkers include Takafumi Sarata and Yoshikazu Kato. Their collaboration has likely fostered an environment of innovation and creativity within the company.

Conclusion

Saiichirou Ohtsuka's contributions to piezoelectric technology exemplify the importance of innovation in creating durable and efficient devices. His work continues to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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