Katsuta, Japan

Saburoo Ogawa


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: The Innovations of Saburoo Ogawa

Introduction

Saburoo Ogawa is a notable inventor based in Katsuta, Japan. He has made significant contributions to the field of materials science, particularly in the development of dielectric isolated substrates. His work has implications for various applications in electronics and semiconductor technology.

Latest Patents

Ogawa holds a patent for a dielectric isolated substrate and the process for producing the same. This invention features a connecting polycrystalline silicon layer with a smooth and flat surface, which is bonded to a single crystal support. The substrate is designed to enhance reliability by preventing voids at the bonded surface, thereby improving the bonding between the single crystal support and the polycrystalline silicon layer. The patent emphasizes the importance of a densified crystal structure and the potential for further heat treatment to achieve optimal results.

Career Highlights

Saburoo Ogawa is associated with Hitachi, Ltd., a leading company in technology and electronics. His work at Hitachi has allowed him to focus on innovative solutions that address the challenges in semiconductor manufacturing. With a patent portfolio that includes 1 patent, Ogawa has established himself as a key figure in his field.

Collaborations

Ogawa has collaborated with notable colleagues such as Yohsuke Inoue and Michio Ohue. These partnerships have contributed to the advancement of technology in their respective areas of expertise.

Conclusion

In summary, Saburoo Ogawa's contributions to the field of dielectric isolated substrates reflect his innovative spirit and dedication to advancing technology. His work continues to influence the semiconductor industry and showcases the importance of collaboration in achieving groundbreaking results.

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