Hitachi, Ltd.

Saburoo Ogawa

Takeshi Tanaka

Michio Ohue

Yasuhiro Mochizuki

Yohsuke Inoue

Kiyoshi Thukuda

A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.

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Katsuta, Japan

Saburoo Ogawa