Munchen, Germany

Sabine Schoniger


Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2000

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Sabine Schoniger

Introduction

Sabine Schoniger is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work has been instrumental in advancing memory technology, showcasing her expertise and innovative spirit.

Latest Patents

Among her latest patents is a groundbreaking invention titled "Semiconductor memory having differential bit lines." This patent describes a semiconductor memory design where bit lines are arranged such that two inverted and two non-inverted bit lines are positioned adjacent to one another. This configuration allows for efficient connection of switching transistors to a collective line, enhancing area efficiency through a common doping region. Another notable patent is for an "Integrated memory," which features a data line pair connected to a bit line pair via at least one differential amplifier. This integrated memory includes a control unit that sets potential states on the data line pair, facilitating the writing of data to memory cells and initiating specific control functions based on detected potential states.

Career Highlights

Sabine Schoniger is currently employed at Siemens Aktiengesellschaft, a leading global technology company. Her role at Siemens has allowed her to collaborate on various innovative projects, further establishing her reputation in the industry.

Collaborations

Throughout her career, Sabine has worked alongside notable colleagues such as Peter Schrogmeier and Thomas Hein. These collaborations have contributed to her success and the advancement of technology in her field.

Conclusion

Sabine Schoniger's contributions to semiconductor technology and her innovative patents reflect her dedication to advancing the field. Her work continues to influence the development of memory technologies, making her a key figure in the industry.

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