Location History:
- Victoria, RO (2007 - 2008)
- jud. Brasov, RO (2009)
Company Filing History:
Years Active: 2007-2009
Title: Innovations by Sabin A Eftimie
Introduction
Sabin A Eftimie is a notable inventor based in Victoria, Romania. He has made significant contributions to the field of non-volatile memory technology, holding three patents to his name. His work focuses on enhancing memory cell functionality and precision in voltage reference circuits.
Latest Patents
One of his latest patents is for a non-volatile memory cell in a standard CMOS process. This invention involves a flip-flop circuit that utilizes an NMOS transistor sharing a floating gate with both a write PMOS capacitor and an erase PMOS capacitor. The erase function is achieved through Fowler-Nordheim tunneling, which induces a positive charge on the floating gate, while the write function provides a negative charge. The flip-flop circuit is reset before a read operation, allowing for efficient state switching based on the charge stored in the floating gate.
Another significant patent is a method for trimming the temperature coefficient of a floating gate voltage reference. This voltage reference circuit allows for precise programming of a reference voltage. It involves programming the threshold voltage of a first non-volatile memory transistor while it is coupled in parallel with a second transistor. Capacitors are strategically connected to ground to facilitate precise adjustments of the temperature coefficient, enhancing the reliability of the voltage reference circuit.
Career Highlights
Sabin A Eftimie is currently employed at Catalyst Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His expertise in non-volatile memory technology has positioned him as a key contributor to advancements in this field.
Collaborations
He has collaborated with notable colleagues such as Sorin Stefan Georgescu and Ilie Marian I Poenaru, further enriching his work and contributions to the industry.
Conclusion
Sabin A Eftimie's innovative work in non-volatile memory technology and voltage reference circuits showcases his significant impact on the semiconductor field. His patents reflect a commitment to advancing technology and improving memory cell functionality.