Non-volatile memory cell in standard cmos process

Abstract

A non-volatile memory cell fabricated with a conventional CMOS process, including a flip-flop circuit having an NMOS transistor that shares a floating gate with a write PMOS capacitor and an erase PMOS capacitor. An erase function is implemented by inducing Fowler-Nordheim tunneling through the erase PMOS capacitor, thereby providing a positive charge on the floating gate. A write function is implemented by inducing Fowler-Nordheim tunneling through the NMOS transistor, thereby providing a negative charge on the floating gate. The write PMOS capacitor provides bias voltages during the erase and write operations. Prior to a read operation, the flip-flop circuit is reset. If the floating gate stores a positive charge, the NMOS transistor turns on, thereby switching the state of the flip-flop circuit. If the floating gate stores a negative charge, the NMOS transistor turns off, thereby leaving the flip-flop circuit in the reset state.