Yokohama, Japan

Ryuuichi Funatsu

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryuuichi Funatsu. Retrieved from https://idiyas.com/inventor/ryuuichi-funatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Ryuuichi Funatsu and Projection Alignment Technology.

Introduction

Ryuuichi Funatsu is an inventor associated with Yokohama, Japan, and Hitachi, Ltd. His patent work addresses alignment in projection systems used to transfer circuit patterns from a mask onto a wafer.

Latest Patents

Funatsu is credited with 1 patent: “Projection Alignment Method and Apparatus.” The invention concerns detecting the relative positions of a mask and wafer in a projection aligner. It describes inclining the microscope objective relative to the plane being inspected so that it does not interfere with the projection light, such as X-rays. This arrangement allows the mask and wafer positions to be monitored while the circuit pattern is being transferred, avoiding the need to withdraw the objective and supporting improved throughput.

Career Highlights

Funatsu’s patent reflects work on precision alignment in semiconductor pattern transfer. By enabling position detection during projection, the method aims to coordinate inspection and exposure within the same process.

Collaborations

The patent information names Asahiro Kuni and Yukio Kembo as Funatsu’s coworkers. The invention is associated with Hitachi, Ltd.

Conclusion

Ryuuichi Funatsu’s projection alignment patent presents an approach to detecting mask and wafer positions during pattern transfer, with the goal of reducing interference and improving process throughput.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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