Yamato, Japan

Ryosuke Watanabe

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryosuke Watanabe. Retrieved from https://idiyas.com/inventor/ryosuke-watanabe-p2x947y0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Ryosuke Watanabe

Introduction

Ryosuke Watanabe is a prominent inventor based in Yamato, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a novel metal oxide that has various applications in semiconductor devices.

Latest Patents

Watanabe holds a patent for a metal oxide, which includes a c-axis aligned crystal containing indium, an element M (which can be gallium, aluminum, yttrium, or tin), and zinc. This metal oxide is characterized by a diffusion length of hydrogen that is 200 nm or less. Additionally, the absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated at a temperature of 400° C. over a duration of 1 hour.

Career Highlights

Watanabe is associated with Semiconductor Energy Laboratory Co., Ltd., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing the understanding and application of metal oxides in various electronic devices.

Collaborations

Watanabe collaborates with notable figures in the industry, including his coworker Shunpei Yamazaki. Their combined expertise contributes to the innovative projects at their laboratory.

Conclusion

Ryosuke Watanabe's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in electronic materials and devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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