Narita, Japan

Ryoji Todaka

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryoji Todaka. Retrieved from https://idiyas.com/inventor/ryoji-todaka-d8t03vur

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Ryoji Todaka

Introduction

Ryoji Todaka, an inventive engineer hailing from Narita, Japan, has made significant strides in the field of ion implantation technology. With a unique patent to his name, he exemplifies the spirit of innovation in the modern tech landscape.

Latest Patents

Ryoji holds a patent for a Beam Stop Apparatus designed specifically for ion implanters. This invention showcases his expertise and contribution to enhancing the precision and efficiency of ion implantation processes, a vital aspect in semiconductor manufacturing.

Career Highlights

Currently, Ryoji is associated with Applied Materials, Inc., a leading company specializing in materials engineering solutions. His work there has been influential in advancing ion implanter technologies, ensuring higher performance in semiconductor fabrication.

Collaborations

Throughout his career, Ryoji has collaborated with notable colleagues, including Jonathan Gerald England and David Richard Burgin. These partnerships reflect the synergy of talented minds working together to push the boundaries of technology and innovation.

Conclusion

Ryoji Todaka stands out as a dedicated inventor whose contributions are instrumental in the field of ion implantation. His patented invention not only highlights his talents but also significantly impacts the semiconductor industry, demonstrating the importance of innovation in today’s technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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