This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 1987.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1987
Title: Ryoji Hagihara: Innovator in Semiconductor Memory Technology
Introduction
Ryoji Hagihara is a prominent inventor based in Kawasaki, Japan. He is known for his significant contributions to the field of semiconductor memory devices. His innovative work has led to advancements that enhance the performance and reliability of memory technology.
Latest Patents
Hagihara holds a patent for a semiconductor memory device that includes a redundancy decoder circuit. This circuit features FAMOS transistors, which are designed to replace defective memory cells with redundancy memory cells. The FAMOS transistors are of the depletion type, and their control gates receive a voltage at ground level or lower during standard memory access modes. This invention showcases his expertise in improving memory device functionality.
Career Highlights
Ryoji Hagihara is associated with Fujitsu Corporation, a leading technology company known for its innovations in computing and electronics. His work at Fujitsu has allowed him to collaborate with other talented engineers and researchers in the field.
Collaborations
Hagihara has worked closely with Mitsuo Higuchi, a fellow engineer at Fujitsu Corporation. Their collaboration has contributed to the development of advanced semiconductor technologies.
Conclusion
Ryoji Hagihara's contributions to semiconductor memory technology exemplify his innovative spirit and dedication to enhancing electronic devices. His patent for a semiconductor memory device reflects his commitment to improving memory performance and reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile