Machida, Japan

Ryoiku Tohgei


Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1981-1982

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2 patents (USPTO):Explore Patents

Title: Ryoiku Tohgei: Innovating in Semiconductor Technology

Introduction

Ryoiku Tohgei is a prominent inventor based in Machida, Japan, known for his significant contributions to semiconductor technology. With a total of two patents to his name, Tohgei is recognized for his innovative designs that enhance the performance of insulated gate field effect transistors (IG FETs). His work has garnered attention in the tech industry, particularly in his role at Fujitsu Corporation.

Latest Patents

Tohgei's latest patent, an Insulated Gate Field Effect Transistor, showcases a sophisticated design that features two depletion mode gate portions aligned along a V-shaped recess in a semiconductor layer. This configuration includes an enhancement mode gate portion located between the two depletion mode gate portions, ensuring that the IG FET operates with a very short effective channel length while facilitating the easy formation of electrodes on the source and drain regions. Notably, this design is characterized by a high punch-through voltage and effectively mitigates the short-channel effect through the unique provision of dual depletion mode channels adjacent to the source and drain regions. Furthermore, Tohgei has also developed a method for manufacturing insulated gate semiconductor devices that minimizes leakage current, enhancing the performance and reliability of SOS type semiconductor devices.

Career Highlights

Throughout his career, Tohgei has made substantial strides in semiconductor technology, demonstrating a commitment to innovation that aligns with the goals of Fujitsu Corporation. His patents reflect a deep understanding of semiconductor physics and a drive to improve device efficiency and performance.

Collaborations

In his pursuit of innovation, Tohgei has collaborated with notable engineers and inventors, including Nobuo Sasaki and Yasuo Kobayashi. These collaborations highlight the importance of teamwork and shared expertise in advancing technology in the ever-evolving field of semiconductors.

Conclusion

Ryoiku Tohgei stands out as a key innovator in the semiconductor realm, with contributions that are expected to have a lasting impact on technology and device performance. His work at Fujitsu Corporation, alongside his colleagues, continues to push the boundaries of what is possible in semiconductor design, paving the way for future advancements.

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