Company Filing History:
Years Active: 2004
Title: Ryoichi Furukawa: Innovator in Semiconductor Manufacturing
Introduction
Ryoichi Furukawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach has led to the development of a unique manufacturing method that enhances the efficiency and quality of semiconductor devices.
Latest Patents
Furukawa holds a patent for a manufacturing method for a semiconductor device. This method involves forming a silicon film on or above a semiconductor substrate, which features a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains. Additionally, he has developed a process for forming a Ta O film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480°C or lower, utilizing a gas obtained by vaporizing Ta(OC H) as a tantalum source gas. He has 1 patent to his name.
Career Highlights
Furukawa is associated with Hitachi Kokusai Electric Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing manufacturing techniques that are crucial for the production of high-performance semiconductor devices.
Collaborations
Throughout his career, Furukawa has collaborated with notable colleagues, including Tadanori Yoshida and Masayuki Tsuneda. These partnerships have fostered an environment of innovation and have contributed to the success of various projects within the semiconductor industry.
Conclusion
Ryoichi Furukawa's contributions to semiconductor manufacturing exemplify the spirit of innovation. His patented methods and collaborative efforts continue to influence the industry positively.