The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Sep. 29, 1999
Applicant:
Inventors:
Ryoichi Furukawa, Tokyo, JP;
Tadanori Yoshida, Saitama, JP;
Masayuki Tsuneda, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Satoru Tagami, Tokyo, JP;
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta O film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC H ) as a tantalum source gas.