Kyoto, Japan

Ryo Tomoida

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Panasonic Intellectual Property Management Co., Ltd.. Active years: 2017-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryo Tomoida. Retrieved from https://idiyas.com/inventor/ryo-tomoida

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2017-2018

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2 patents (USPTO):Explore Patents

Title: Ryo Tomoida: Infrared Sensor Patents

Introduction

Ryo Tomoida is an inventor associated with Kyoto, Japan, and Panasonic Intellectual Property Management Co., Ltd. His patent work includes infrared sensor designs, and he is credited with 2 patents.

Latest Patents

Tomoida’s latest patents describe infrared sensors that position a lens above an infrared detecting device and use a member and a gap as part of the sensor structure.

One patent specifies a spacer placed between the member and the lens to form the gap. The spacer directly contacts the lens and has a circular inner periphery whose diameter is larger than the maximum internal diameter of the member’s first opening.

The other patent describes a gap between the member and the lens that extends across a wider range than the member’s opening.

Career Highlights

Tomoida’s listed patent activity focuses on infrared sensor construction, particularly the arrangement of the lens, surrounding member, and intervening gap. His work is associated with Panasonic Intellectual Property Management Co., Ltd.

Collaborations

Takahiro Miyatake and Masao Kirihara are listed as Tomoida’s coworkers.

Conclusion

Ryo Tomoida’s two listed patents address structural features of infrared sensors, including spacer geometry and the relationship between a lens, an opening, and a gap.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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