Mie Mie, Japan

Ryo Ogawa

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Kioxia Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryo Ogawa. Retrieved from https://idiyas.com/inventor/ryo-ogawa-pix5hfcr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Ryo Ogawa: Innovator in Semiconductor Technology

Introduction

Ryo Ogawa is a prominent inventor based in Mie, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to imprint apparatuses.

Latest Patents

Ryo Ogawa holds a patent for an "Imprint apparatus, pattern forming method, and method of manufacturing semiconductor device." This invention includes a chuck with a temperature controller designed to adjust the temperature of a substrate. The chuck is capable of holding the substrate, while a template stage holds a template with a pattern facing the substrate. The controller manages the temperature adjustments based on magnification errors between the pattern and the substrate's shot region. This technology enhances the precision of pattern transfers in semiconductor manufacturing.

Career Highlights

Ryo Ogawa is currently employed at Kioxia Corporation, where he continues to develop innovative solutions in the semiconductor industry. His work focuses on improving manufacturing processes and enhancing the efficiency of semiconductor devices.

Collaborations

[Section skipped due to space constraints.]

Conclusion

Ryo Ogawa's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the field. His work at Kioxia Corporation continues to influence advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…