Toyama, Japan

Ryo Ebisawa

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryo Ebisawa. Retrieved from https://idiyas.com/inventor/ryo-ebisawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Ryo Ebisawa: Innovator in Semiconductor Processing

Introduction

Ryo Ebisawa is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approaches have led to advancements in substrate processing techniques.

Latest Patents

Ryo Ebisawa holds 1 patent for a method of processing substrates, which includes a technique for manufacturing semiconductor devices. This patent describes a process that involves forming a film containing silicon, a predetermined element, and nitrogen on a substrate through a series of carefully orchestrated cycles. The method includes steps such as supplying various gases to the substrate in a specific order to achieve optimal results.

Career Highlights

Ebisawa is currently employed at Kokusai Electric Corporation, where he continues to develop and refine semiconductor processing technologies. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Ryo Ebisawa collaborates with Kiyohisa Ishibashi, contributing to the advancement of their projects and innovations in the semiconductor field.

Conclusion

Ryo Ebisawa's contributions to semiconductor processing exemplify the importance of innovation in technology. His patent and ongoing work at Kokusai Electric Corporation highlight his role as a key figure in this industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…