Location History:
- Yokohama, JP (1987)
- Tokyo, JP (1987)
Company Filing History:
Years Active: 1987
Title: Ryo Dang: Innovator in Semiconductor Technology
Introduction
Ryo Dang is a notable inventor based in Yokohama, Japan, recognized for his contributions to semiconductor technology. With a total of two patents to his name, he has made significant advancements in the manufacturing of MOS devices and voltage-controlled semiconductor switching devices.
Latest Patents
Ryo Dang's latest patents include a method of manufacturing a MOS device. This method involves selectively etching a semiconductor substrate to create a groove in both the field region and the element formation region. The angle formed between the wall of the groove and an imaginary extension of the top surface of the element formation region is crucial, satisfying the relation of 70 degrees to 90 degrees. Following this, a field insulating film is deposited in the groove, leading to the formation of a MOS transistor within the element formation region, which contains source, drain, and channel regions of a field effect transistor. Additionally, he has developed a voltage-controlled type semiconductor switching device. This device features a pair of controlled electrodes supplied with a control voltage signal, and a semiconductive layer positioned between the electrodes, which is electrically insulative. The design allows for the flow of majority carriers in a lateral direction, enhancing the efficiency of current conduction and cut-off modes.
Career Highlights
Throughout his career, Ryo Dang has worked with prominent companies, including Tokyo Shibaura Denki Kabushiki Kaisha. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.
Collaborations
Ryo Dang has collaborated with notable coworkers such as Naoyuki Shigyo and Toshiaki Ikoma. Their collective efforts have further advanced the field of semiconductor technology.
Conclusion
Ryo Dang's innovative work in semiconductor technology, particularly in MOS devices and voltage-controlled switching devices, showcases his significant contributions to the field. His patents reflect a deep understanding of semiconductor manufacturing processes and their applications.