Ithaca, NY, United States of America

Rusen Yan

This inventor holds 1 USPTO granted patent. Top assignees: Cornell University, Govmt. of U.s.—navy. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rusen Yan. Retrieved from https://idiyas.com/inventor/rusen-yan-5iim19q0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: The Innovations of Rusen Yan

Introduction

Rusen Yan is a notable inventor based in Ithaca, NY (US). He has made significant contributions to the field of semiconductor and superconductor technologies. His work focuses on the development of advanced solid-state devices that leverage unique material properties.

Latest Patents

Rusen Yan holds a patent for "Epitaxial semiconductor/superconductor heterostructures." This patent describes solid-state devices that include a layer of superconductor material epitaxially grown on a crystalline high thermal conductivity substrate. The superconductor material can be one of several compounds, including TiNx, ZrNx, HfNx, VNx, NbNx, TaNx, MoNx, WNx, or their alloys. Additionally, the invention includes one or more layers of semiconducting, insulating, or metallic material epitaxially grown on the superconductor layer.

Career Highlights

Throughout his career, Rusen Yan has worked with prestigious organizations, including Cornell University and the U.S. Navy. His experience in these institutions has allowed him to contribute to cutting-edge research and development in his field.

Collaborations

Rusen Yan has collaborated with notable colleagues such as H Grace Xing and John Wright. Their combined expertise has further advanced the research and applications of semiconductor and superconductor technologies.

Conclusion

Rusen Yan's innovative work in epitaxial semiconductor and superconductor heterostructures showcases his commitment to advancing technology. His contributions have the potential to impact various applications in solid-state devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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