Ruqi Han

Title: **Innovator Spotlight: Ruqi Han**

Introduction

Ruqi Han is a prominent inventor based in Shenzhen, China, known for her contributions to advanced semiconductor technology. With two published patents to her name, she has made significant strides in the fields of FinFET designs and thin film transistors.

Latest Patents

Ruqi Han's latest work includes two innovative patents:

1. **Dual-gate FinFET**: This patent details the designs and fabrication processes for a FinFET. The fabrication method involves forming a dielectric stripe on a substrate, implanting ions using this dielectric stripe as a mask, and converting a surface layer into an amorphous layer. A semiconductor layer is then formed, which is recrystallized to a monocrystalline state. The process further includes designing regions for source and drain on either side of the dielectric stripe and forming Fin bodies by removing the dielectric stripe between spacers.

2. **Method for Manufacturing Self-Aligned Thin Film Transistor**: This patent discusses a method to create a self-aligned metal oxide thin film transistor. The process begins with forming a metal oxide semiconductor layer with high carrier concentration, followed by using plasma oxidation to create a channel region that aligns with the gate electrode. This innovative approach not only simplifies the manufacturing process but also enhances the controllability of the transistor's electrical characteristics.

Career Highlights

Ruqi Han is currently affiliated with Peking University Shenzhen Graduate School, where she continues to push the boundaries of semiconductor manufacturing. Her expertise in this domain is evidenced by her pioneering patents and impactful research.

Collaborations

During her career, Ruqi has collaborated with esteemed colleagues such as Shengdong Zhang and Dedong Han. These partnerships have fostered a dynamic exchange of ideas and facilitated groundbreaking research in their shared field of technology.

Conclusion

Ruqi Han’s contributions to the field of semiconductor design and manufacturing highlight her as an influential figure in technology innovation. With her ongoing research and collaboration efforts, she continues to pave the way for future advancements in electronics. Her patents not only demonstrate technical ingenuity but also reflect the potential for real-world applications in the ever-evolving landscape of technology.