The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jun. 13, 2011
Shengdong Zhang, Shenzhen, CN;
Xin He, Shenzhen, CN;
Yi Wang, Shenzhen, CN;
Dedong Han, Shenzhen, CN;
Jeng Han, Shenzhen, CN;
Shengdong Zhang, Shenzhen, CN;
Xin He, Shenzhen, CN;
Yi Wang, Shenzhen, CN;
Dedong Han, Shenzhen, CN;
Ruqi Han, Shenzhen, CN;
Peking University Shenzhen Graduate School, Shenzhen, Guangdong, CN;
Abstract
Disclosed is a method for manufacturing a self-aligned metal oxide thin film transistor. According to the present invention, a metal oxide semiconductor layer having a high carrier concentration is formed, and then a channel region which is self-aligned with a gate electrode is oxidized by a plasma having oxidbillity so that the channel region has a low carrier concentration and the source and drain regions have high carrier concentrations while the resulting transistor has a self-aligned structure. In addition, the threshold voltage of the transistor is controlled by the conditions under which the channel region of the transistor is subsequently oxidized by plasma having oxidbillity at a low temperature. Therefore, the controllability of the characteristics of the transistor is improved significantly, and the manufacturing process is simplified.