This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: The University of Texas System. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Ruijing Ge: Innovator in Non-Volatile Resistance Switching Technology
Introduction
Ruijing Ge is a prominent inventor based in Boise, ID (US). He has made significant contributions to the field of non-volatile resistance switching technology. His innovative work focuses on the development of a two-dimensional (2D) non-volatile switch that has the potential to revolutionize electronic devices.
Latest Patents
Ruijing Ge holds a patent for his invention titled "Non-volatile resistance switching in monolayer atomic sheets." This patent describes a 2D non-volatile switch (2DNS) featuring a vertical metal-insulator-metal (MIM) structure. The switch includes a semiconducting monolayer crystalline non-metallic atomic sheet sandwiched between a top metal electrode and a bottom metal electrode. The 2DNS is capable of performing stable non-volatile resistance switching, including both unipolar and bipolar switching, with a high ON/OFF ratio, low ON resistance, and low operating voltage. The monolayer atomic sheet may consist of hexagonal boron nitride (h-BN) or a transition metal dichalcogenide (TMD), such as MoS, MoSe, WS, or WSe. Additionally, the patent provides methods for synthesizing a semiconducting monolayer crystalline non-metallic atomic sheet on a target substrate.
Career Highlights
Ruijing Ge is affiliated with the University of Texas System, where he continues to advance his research and innovation in the field of materials science and engineering. His work has garnered attention for its potential applications in next-generation electronic devices.
Collaborations
Ruijing Ge has collaborated with notable colleagues, including Deji Akinwande and Xiaohan Wu. Their combined expertise contributes to the advancement of research in non-volatile switching technologies.
Conclusion
Ruijing Ge's innovative contributions to non-volatile resistance switching technology highlight his role as a leading inventor in the field. His patent and ongoing research promise to impact the future of electronic devices significantly.