Rui Q Yang

Title: Innovations of Rui Q Yang in Quantum Well Light Emitting Devices

Introduction

Rui Q Yang is an accomplished inventor based in Clarksville, MD (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of light emitting devices. His innovative work focuses on enhancing the efficiency and performance of these devices through advanced engineering techniques.

Latest Patents

Rui Q Yang holds a patent for a "Parallel cascade quantum well light emitting device." This invention relates to quantum well semiconductor light emitting devices, such as lasers, that utilize type-II quantum wells and interband transitions of energy states between the conduction band and the valence band for light emission. The design results in a significant improvement in radiative efficiency. The semiconductor light emitting devices comprise a multilayer semiconductor structure with multiple active regions, each separated by an injection region. This configuration enhances carrier injection efficiency and optical gain while reducing operating voltage and increasing power efficiency. The use of type-II tunnel junctions in the injection regions allows for the reuse of carriers, further improving device performance.

Career Highlights

Rui Q Yang is currently associated with Maxion Technologies, Inc., where he continues to innovate and develop cutting-edge technologies in the field of semiconductor devices. His work has been instrumental in advancing the capabilities of light emitting devices, making them more efficient and effective for various applications.

Collaborations

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Conclusion

Rui Q Yang's contributions to the field of quantum well light emitting devices exemplify the impact of innovative thinking in technology. His patent reflects a commitment to improving efficiency and performance in semiconductor applications.