Rui-Cheng Huang

Title: Innovations of Rui-Cheng Huang in Semiconductor Fabrication

Introduction

Rui-Cheng Huang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor fabrication, particularly through his innovative methods in creating polysilicon layers. His work is essential for advancing technology in various electronic applications.

Latest Patents

Rui-Cheng Huang holds a patent for a "Method of fabricating poly silicon layer." This patent outlines a process that begins with providing a substrate and forming an amorphous silicon layer on it. A patterned metal layer is then created on the amorphous silicon layer. Following this, a pulsed rapid thermal annealing process is executed to form a metal silicide between the patterned metal layer and the amorphous silicon layer. This method effectively converts the amorphous silicon layer into a polysilicon layer while preventing metal contamination.

Career Highlights

Huang is currently employed at Chunghwa Picture Tubes, Ltd., where he applies his expertise in semiconductor technology. His innovative approach to fabricating polysilicon layers has positioned him as a valuable asset in the industry. His work not only enhances the quality of semiconductor devices but also contributes to the overall efficiency of electronic manufacturing processes.

Collaborations

Rui-Cheng Huang has collaborated with several talented individuals in his field, including Chiung-Wei Lin and Sheng-Chi Lee. These collaborations have fostered a productive environment for innovation and have led to advancements in semiconductor technology.

Conclusion

Rui-Cheng Huang's contributions to the field of semiconductor fabrication through his patented methods demonstrate his commitment to innovation. His work at Chunghwa Picture Tubes, Ltd. and collaborations with fellow professionals highlight the importance of teamwork in advancing technology. His achievements continue to influence the industry positively.