The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
May. 30, 2006
Chiung-wei Lin, Taipei County, TW;
Sheng-chi Lee, Taipei, TW;
Yi-liang Chen, Kaohsiung, TW;
Rui-cheng Huang, Kaohsiung, TW;
Te-hua Teng, Taoyuan County, TW;
Chiung-Wei Lin, Taipei County, TW;
Sheng-Chi Lee, Taipei, TW;
Yi-Liang Chen, Kaohsiung, TW;
Rui-Cheng Huang, Kaohsiung, TW;
Te-Hua Teng, Taoyuan County, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Abstract
A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.