Rui-Cheng Huang

Title: The Innovations of Rui-Cheng Huang

Introduction: Rui-Cheng Huang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of high-frequency surface acoustic wave devices. His innovative work has led to the development of a patented technology that enhances the performance of acoustic devices.

Latest Patents: Rui-Cheng Huang holds a patent for a high-frequency surface acoustic wave device. This invention relates to a device that can be manufactured using the same equipment and materials as those required for low-frequency surface acoustic wave devices. The device comprises a piezoelectric substrate and a high acoustic velocity layer, which is formed on the substrate's surface. The layer's acoustic velocity exceeds 5000 m/sec, and it is preferably made of aluminum oxide. The manufacturing process involves an electron-beam evaporation technique, with the layer's thickness ranging between 2 µm and 20 µm.

Career Highlights: Throughout his career, Rui-Cheng Huang has worked with esteemed institutions such as Tatung University and Tatung Company. His experience in these organizations has allowed him to refine his skills and contribute to advancements in technology.

Collaborations: Rui-Cheng Huang has collaborated with various professionals in his field, including his coworker Wen-Ching Shih. Their joint efforts have furthered research and development in acoustic wave technology.

Conclusion: Rui-Cheng Huang's contributions to the field of high-frequency surface acoustic wave devices demonstrate his innovative spirit and dedication to advancing technology. His patent reflects a significant achievement in the industry, showcasing the potential for further developments in acoustic devices.