Alsdorf, Germany

Rudolf Munzer


Average Co-Inventor Count = 5.4

ph-index = 5

Forward Citations = 77(Granted Patents)


Location History:

  • Herzogenrath, DE (1985)
  • Alsdorf, DE (1981 - 1988)

Company Filing History:


Years Active: 1981-1988

Loading Chart...
6 patents (USPTO):Explore Patents

Title: Rudolf Munzer: Innovator in Silicon Carbide Technology

Introduction

Rudolf Munzer is a notable inventor based in Alsdorf, Germany, recognized for his contributions to the field of materials science, particularly in the development of silicon carbide technologies. With a total of 6 patents to his name, Munzer has made significant advancements in methods for creating shaped bodies from silicon carbide and graphite.

Latest Patents

Munzer's latest patents include innovative methods for producing shaped bodies of silicon carbide and graphite. One of his key inventions is a method that involves assembling a graphitic body from preformed parts, immersing it in a silicon melt, and allowing the silicon to react with the graphite to form silicon carbide. This process is conducted under a chemically inert atmosphere to ensure optimal results. Another significant patent focuses on creating porous silicon carbide bodies, which involves using a specific particle size of carbon and silicon carbide, combined with a binder, and subjected to a series of heating and siliconization processes.

Career Highlights

Throughout his career, Munzer has worked with prominent research institutions, including the Kernforschungsanlage Jülich, where he contributed to various projects aimed at advancing material technologies. His work has been instrumental in enhancing the understanding and application of silicon carbide in various industries.

Collaborations

Munzer has collaborated with esteemed colleagues such as Ashok K. Gupta and Erno Gyarmati, further enriching his research and development efforts in the field of silicon carbide technology.

Conclusion

Rudolf Munzer's innovative work in silicon carbide technology has paved the way for advancements in material science. His patents reflect a deep understanding of the processes involved in creating high-quality silicon carbide products.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…