The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 1986

Filed:

Jun. 10, 1985
Applicant:
Inventors:

Ashok K Gupta, Julich, DE;

Erno Gyarmati, Julich, DE;

Hermann Kreutz, Monchengladbach, DE;

Rudolf Munzer, Alsdorf, DE;

Aristides Naoumidis, Julich, DE;

Hubertus Nickel, Julich, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
264 44 ; 264 49 ; 264 66 ; 264 82 ; 264129 ; 423345 ; 423346 ; 501 88 ; 501 90 ;
Abstract

Porous silicon carbide bodies are obtained by starting with a powder of particle size falling within a single sieve mesh range fraction and consisting either entirely of carbon particles or a mixture of carbon and silicon carbide particles of the same mesh fraction is mixed or coated with 15 to 30% by weight of a binder, moulded to shape, warmed in the temperature range from 40.degree. to 200.degree. C. to vaporize volatile material and then coked at a temperature rising to 850.degree. C. Then it is siliconized by raising the temperature to the range from 1650.degree. to 1950.degree. C. with gaseous silicon or impregnated with silicon by dipping the body into a silicon melt and convert it to carbide, with the excess silicon thereafter being removed by vaporizing out or by boiling in lye. Sieve mesh fractions in the region of a few hundred .mu.m are preferred, and the density of the porous body after pressing but before siliconizing should lie in the neighborhood of 0.6 to 0.7 g/cm.sup.3.


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