Anhui, China

Rubin Wan



 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Hefei Anhui, CN (2019 - 2020)
  • Anhui, CN (2020 - 2023)

Company Filing History:


Years Active: 2019-2023

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7 patents (USPTO):Explore Patents

Title: Innovations by Inventor Rubin Wan

Introduction

Rubin Wan is a notable inventor based in Anhui, China. He has made significant contributions to the field of power supply technology, holding a total of seven patents. His work focuses on improving heat dissipation systems and enhancing the reliability of insulated gate bipolar transistors.

Latest Patents

One of his latest patents is a heat dissipating system and power cabinet. This innovative system includes a cabinet with both outer and inner circulating air ducts, a first circulating fan, and a heat exchanger. The design allows for improved heat dissipation efficiency within the inner circulating air duct. Another significant patent is for an insulated gate bipolar transistor (IGBT) module, which features a conductor installing structure that enhances insulation reliability. This structure includes a substrate, a conductor, and an insulation sleeve that isolates the conductor from the substrate, improving the creepage distance and overall performance of the IGBT module.

Career Highlights

Rubin Wan is currently employed at Sungrow Power Supply Co., Ltd., where he continues to innovate in the field of power supply solutions. His work has been instrumental in advancing technologies that enhance energy efficiency and reliability.

Collaborations

Rubin collaborates with talented coworkers, including Qiyao Zhu and Hao Zheng, who contribute to the innovative projects at Sungrow Power Supply Co., Ltd.

Conclusion

Rubin Wan's contributions to the field of power supply technology through his patents and collaborative efforts highlight his role as a leading inventor in the industry. His innovations are paving the way for more efficient and reliable power systems.

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