Roy R Wang

Title: Roy R Wang: Innovator in Magneto-Resistive Memory Technology

Introduction

Roy R Wang is a notable inventor based in Eden Prairie, MN (US). He has made significant contributions to the field of memory technology, particularly in the development of magneto-resistive memory systems. His innovative approach has led to advancements that enhance the efficiency and reliability of memory cells.

Latest Patents

Roy R Wang holds a patent for a "Complementary giant magneto-resistive memory with full-turn word line." This patent describes a magneto-resistive memory system that features a radiation-hardened and low power memory cell. The design includes a word line select transistor that helps eliminate disturbances in unselected cells. Additionally, the memory cell utilizes a full-turn write word line, which allows for writing true and complementary bit values while consuming less current than previous architectures. This improved memory cell can be integrated into systems with precision current drivers and auto-zero sense amplifiers, further reducing power consumption and enhancing overall system reliability.

Career Highlights

Roy R Wang is currently employed at Honeywell International Inc., where he continues to work on innovative memory technologies. His expertise in the field has positioned him as a key contributor to advancements in memory systems.

Collaborations

Throughout his career, Roy has collaborated with notable colleagues, including Owen J Hynes and Romney R Katti. These partnerships have fostered an environment of innovation and have contributed to the success of various projects.

Conclusion

Roy R Wang's contributions to magneto-resistive memory technology exemplify his commitment to innovation and excellence in the field. His work not only advances memory technology but also enhances the reliability and efficiency of memory systems.