The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Oct. 24, 2005
Owen J. Hynes, Otsego, MN (US);
Roy R. Wang, Eden Prairie, MN (US);
Romney R. Katti, Shorewood, MN (US);
Daniel S. Reed, Maple Plain, MN (US);
Owen J. Hynes, Otsego, MN (US);
Roy R. Wang, Eden Prairie, MN (US);
Romney R. Katti, Shorewood, MN (US);
Daniel S. Reed, Maple Plain, MN (US);
Honeywell International, Inc., Morristown, NJ (US);
Abstract
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.