Company Filing History:
3 out of 164,197 
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Years Active: 2008-2010
Title: Roy H Tilghman: Innovator in FET Device Technology
Introduction
Roy H Tilghman is a notable inventor based in Stormville, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for improving PFET device performance. With a total of 3 patents to his name, Tilghman's work has had a lasting impact on the industry.
Latest Patents
One of Tilghman's latest patents is titled "Method of forming nitride films with high compressive stress for improved PFET device performance." This innovative method involves creating a FET device where a nitride layer is deposited over the PFET gate structure. The nitride layer exhibits a compressive stress greater than about 2.8 GPa, which enhances the performance of the PFET. The deposition process utilizes a high-density plasma (HDP) method, with the substrate placed on an electrode receiving a bias power ranging from about 50 W to about 500 W. This bias power is characterized as high-frequency power supplied by an RF generator at 13.56 MHz. Additionally, the FET device may include NFET gate structures, with a blocking layer deposited over them to ensure that the nitride layer does not contact the NFET gate structures after the blocking layer is removed. The nitride layer's thickness ranges from about 300-2000 Å.
Career Highlights
Throughout his career, Roy H Tilghman has worked with prominent companies in the technology sector, including IBM and Novellus Systems Incorporated. His experience in these organizations has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Some of his notable coworkers include Richard Anthony Conti and Ronald P Bourque. Their collective expertise has fostered an environment of innovation and creativity in their respective projects.
Conclusion
Roy H Tilghman's contributions to the field of semiconductor technology, particularly through his patented methods for enhancing PFET device performance, highlight his role as a significant inventor. His work continues to influence advancements in the industry.