Carson, CA, United States of America

Rosie M Dia

This inventor holds 2 USPTO granted patents. Top assignees: Northrop Grumman Systems Corporation, Trw Limited. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rosie M Dia. Retrieved from https://idiyas.com/inventor/rosie-m-dia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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2 patents (USPTO):Explore Patents

Title: Inventor Spotlight: Rosie M Dia

Introduction

Rosie M Dia, an innovative inventor based in Carson, California, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, Dia has focused on solving critical issues associated with metal films and etching processes in semiconductor devices.

Latest Patents

Dia's latest patents demonstrate his expertise in enhancing semiconductor yields. The first patent is a "Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape." This process improves the yield of high electron mobility transistors (HEMTs), which are often fragile and susceptible to damage during traditional metal lift-off techniques. By employing adhesive tape, Dia minimizes damage to delicate submicron structures, significantly improving overall semiconductor performance.

His second patent, titled "Method for determining etch depth," innovates the monitoring process of etch depth in InP-based FET devices. By observing the source-drain current-voltage (I-V) relationship during the etching process, Dia identifies a kink that appears in the linear portion of the I-V relationship as etch depth increases. This allows for precise control over etch depth, enabling the reproducible optimization of transistor characteristics.

Career Highlights

Throughout his career, Rosie M Dia has worked with esteemed companies, including TRW Limited and Northrop Grumman Systems Corporation. His experience in these prolific organizations has allowed him to hone his skills in semiconductor technology and profoundly impact the industry.

Collaborations

Dia has collaborated with various notable colleagues, such as Ronald W Grundbacher and Michael Edward Barsky. These partnerships have contributed to the advancement of processes and methods within semiconductor technology, showcasing the importance of teamwork in innovation.

Conclusion

With his pioneering patents and contributions to semiconductor technology, Rosie M Dia exemplifies the innovative spirit that drives the industry forward. His work not only addresses the challenges faced in semiconductor manufacturing but also lays the groundwork for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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