Newburgh, NY, United States of America

Rosemary Christie

This inventor holds 2 USPTO granted patents. Top assignees: International Business Machines Corporation, Kabushiki Kaisha Toshiba, Siemens Aktiengesellschaft. Active years: 1986-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rosemary Christie. Retrieved from https://idiyas.com/inventor/rosemary-christie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 70(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (1986)
  • Newburgh, NY (US) (1999)

Company Filing History:


Years Active: 1986-1999

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2 patents (USPTO):Explore Patents

Title: Innovations by Rosemary Christie

Introduction

Rosemary Christie is a notable inventor based in Newburgh, NY (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative approaches to manufacturing processes.

Latest Patents

One of her latest patents is titled "Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal." This invention focuses on achieving reactive ion etching (RIE) of metallization at low power and low pressure using Cl.sub.2 and HCl as reactant species. The process involves creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization. The method allows for the etching of three-layer metallizations, including bulk aluminum or aluminum alloy sandwiched between barrier layers made from materials such as Ti/TiN. The etching process is carefully controlled to ensure defect-free side walls in submicron metallization lines.

Another significant patent is the "Method of forming recessed oxide isolation with reduced steepness." This invention describes a method for creating an optimum recessed oxide isolation structure within a monocrystalline silicon body. The process involves forming a layered structure of silicon dioxide, polycrystalline silicon, and silicon nitride, followed by anisotropic reactive ion etching to achieve vertical walls in the trench. The trench is then extended through chemical etching, resulting in inwardly sloped walls, which are thermally oxidized to achieve the desired oxide isolation depth.

Career Highlights

Rosemary Christie has worked with prominent companies in the technology sector, including IBM and Siemens Aktiengesellschaft. Her experience in these organizations has contributed to her expertise in semiconductor manufacturing and innovation.

Collaborations

Throughout her career, Rosemary has collaborated with notable professionals such as Munir D Naeem and Masaki Narita. These collaborations have further enriched her work and contributed to her success as an inventor.

Conclusion

Rosemary Christie is a distinguished inventor whose work in semiconductor technology has led to innovative patents that enhance manufacturing processes. Her contributions continue to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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