Rongrong Zhu

Title: The Innovations of Rongrong Zhu: Pioneering Patents in Trench Bipolar Transistors

Introduction: Rongrong Zhu, an accomplished inventor based in Chengdu, China, has made significant contributions to the field of semiconductor technology. With two granted patents to his name, Zhu has focused on developing advanced components that improve device performance and reduce operational losses, particularly in trench bipolar transistors.

Latest Patents: Rongrong Zhu's latest innovations include two notable patents. The first patent, titled "Split Gate CSTBT with Current Clamping PMOS and Manufacturing Method Thereof," introduces a split gate carrier stored trench bipolar transistor (CSTBT) with a current clamping PMOS. This invention features a P-type buried layer and a split gate electrode that maintains equal potential with an emitter metal. It effectively mitigates the adverse effects of an N-type carrier stored layer on the breakdown characteristics of the device, enhancing the trade-off between the on-state voltage drop and turn-off loss. The introduction of a parasitic PMOS structure further optimizes performance by reducing saturation current, improving the short-circuit safe operating area, and minimizing switching losses.

The second patent, "Three-Dimensional Carrier Stored Trench IGBT and Manufacturing Method Thereof," presents a three-dimensional carrier stored trench insulated gate bipolar transistor (IGBT). This innovation incorporates a P-type buried layer and a split gate electrode to counteract the disadvantages of N-type carrier stored layers. By decreasing the on-state voltage drop, this invention strengthens the device's efficiency and enhances the relationship between voltage drop and turn-off loss. Additionally, the Z-axis directed split gate electrodes improve the device's channel density and expand the short-circuit safe operating area.

Career Highlights: Rongrong Zhu is affiliated with the University of Electronic Science and Technology of China. His work in the university milieu underscores his dedication to research and innovation in semiconductor technology, contributing to the advancement of materials and methods that have practical implications in the industry.

Collaborations: Throughout his career, Rongrong Zhu has collaborated with notable colleagues, including Jinping Zhang and Yuanyuan Tu. These partnerships reflect a collective effort to push the boundaries of technology and foster innovation in their respective fields.

Conclusion: Rongrong Zhu continues to be a significant figure in semiconductor innovation, with his patents offering valuable solutions to common challenges in device performance. His research embodies the spirit of invention and serves as an inspiration for aspiring inventors and engineers in the technology sector.