Company Filing History:
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Years Active: 2008-2010
Title: The Innovations of Ronald P Bourque
Introduction
Ronald P Bourque is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for enhancing device performance. With a total of 3 patents to his name, Bourque's work has had a lasting impact on the industry.
Latest Patents
One of Bourque's latest patents is titled "Method of forming nitride films with high compressive stress for improved PFET device performance." This innovative method involves creating a FET device where a nitride layer is deposited over the PFET gate structure. The nitride layer exhibits a compressive stress greater than about 2.8 GPa, which significantly enhances the performance of the PFET. The deposition process utilizes a high-density plasma (HDP) technique, with the substrate placed on an electrode receiving a bias power ranging from about 50 W to about 500 W. This power is characterized as high-frequency, supplied by an RF generator operating at 13.56 MHz. Additionally, the FET device may include NFET gate structures, with a blocking layer ensuring that the nitride layer does not contact the NFET gate structures after its removal. The nitride layer's thickness ranges from about 300-2000 Å.
Career Highlights
Throughout his career, Ronald P Bourque has worked with prominent companies in the technology sector. He has been associated with International Business Machines Corporation (IBM) and Novellus Systems Incorporated, where he has contributed to various innovative projects and advancements in semiconductor technology.
Collaborations
Bourque has collaborated with several professionals in his field, including Richard Anthony Conti and Nancy R Klymko. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies.
Conclusion
Ronald P Bourque's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods continue to shape the future of device performance in the industry.