Berkeley Heights, NJ, United States of America

Ronald J Nelson


Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 80(Granted Patents)


Company Filing History:


Years Active: 1981-1987

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ronald J. Nelson

Introduction

Ronald J. Nelson is a notable inventor based in Berkeley Heights, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has advanced the understanding and application of buried heterostructure devices and protection techniques for semiconductor substrates.

Latest Patents

One of Ronald J. Nelson's latest patents focuses on "Buried heterostructure devices with unique contact-facilitating layers." This invention addresses the challenges faced during the fabrication of buried heterostructure InP/InGaAsP lasers. The patent describes a method that alleviates mask undercutting during the mesa etching step through a combination of epitaxial growth and plasma deposition techniques. Another significant patent is related to the "Protection of semiconductor substrates during epitaxial growth processes." This innovation has virtually eliminated thermal degradation of compound single crystal substrates, such as InP, by utilizing a localized solution to provide a partial pressure of volatile elements, thus preventing thermal damage.

Career Highlights

Throughout his career, Ronald J. Nelson has worked with prestigious organizations, including AT&T Bell Laboratories and Bell Telephone Laboratories. His experience in these companies has allowed him to contribute to groundbreaking research and development in semiconductor technologies.

Collaborations

Ronald has collaborated with notable individuals in his field, including Randall Brian Wilson and Paul R. Besomi. These collaborations have further enriched his work and expanded the impact of his inventions.

Conclusion

Ronald J. Nelson's innovative contributions to semiconductor technology have significantly advanced the field. His patents and career achievements reflect his dedication to improving the efficiency and effectiveness of semiconductor devices.

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