The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1981
Filed:
Mar. 31, 1980
Ronald J Nelson, Berkeley Heights, NJ (US);
Phillip D Wright, New Providence, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal contact on the top surface is recessed within the periphery of an overlying mask, and the etching time is controlled so that the contact is not undercut by the sidewalls of the mesa. Another feature is the use of a self-limiting etchant which etches the mirrors smoothly and at a faster rate than the sidewalls. Preferably, the mirrors etch isotropically and the sidewalls etch preferentially along crystallographic planes. Also described is subsequent batch processing (e.g., forming mirror coatings) and on-wafer testing of the etched-mirror lasers.