Ronald J Johansson

Title: The Innovative Contributions of Ronald J Johansson

Introduction

Ronald J Johansson is a notable inventor based in Lawrenceville, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. With a focus on dielectrically isolated devices, Johansson's work has implications for the advancement of electronic components.

Latest Patents

Johansson holds a patent titled "Method for forming dielectrically isolated transistor." This patent describes a method for creating dielectrically isolated devices by forming a first insulating layer on a flat monocrystalline surface of a silicon wafer. The process involves defining active regions on the surface, removing portions of the insulating layer, and depositing silicon epitaxially within the apertures. The resulting structure allows for the formation of oxide-isolated island portions of the monocrystalline silicon layer, which are crucial for device fabrication.

Career Highlights

Throughout his career, Ronald J Johansson has been associated with Harris Corporation, where he has contributed to various projects in semiconductor technology. His expertise in forming dielectrically isolated devices has positioned him as a valuable asset in the field. Johansson's innovative approach has led to advancements that enhance the performance and reliability of electronic devices.

Collaborations

Johansson has collaborated with notable colleagues, including Lubomir L Jastrzebski and Donald J Sauer. These collaborations have fostered an environment of innovation and have contributed to the successful development of new technologies in the semiconductor industry.

Conclusion

In summary, Ronald J Johansson's contributions to the field of semiconductor technology through his patent and work at Harris Corporation highlight his role as an influential inventor. His innovative methods for forming dielectrically isolated devices continue to impact the electronics industry positively.