The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 1990
Filed:
Aug. 02, 1989
Lubomir L Jastrzebski, Plainsboro, NJ (US);
Ronald J Johansson, Lawrenceville, NJ (US);
Donald J Sauer, Allentown, NJ (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A method for forming dielectrically isolated devices comprises forming a first insulating layer on a flat monocrystalline surface of a silicon wafer. A plurality of active regions is defined on the surface using existing manufacturing masks. Portions of the insulating layer not included in the device regions are removed, leaving apertures. Silicon is epitaxially deposited within the apertures and over the first insulating layer so as to form a continuous monocrystalline layer. The surface of the monocrystalline is oxidized. The resulting oxide is then removed, thereby exposing the surface of the monocrystalline layer having its thickness reduced. A second insulating layer is formed over the monocrystalline layer, and a layer of silicon nitride is deposited over the second insulating layer. The plurality of active regions is defined on the layer of silicon nitride, again using existing manufacturing masks. Portions of the silicon nitride layer and the second insulating layer not included within the active regions are removed. Portions of the monocrystalline silicon layer thus exposed are oxidized to form oxide-isolated island portions of the monocrystalline silicon layer. The remaining portions of the silicon nitride and the second insulating layer are removed and devices are formed in the island portions.